Application Chart

application

Mercury Probe C-V map Systems:

Measurement techniques Capacitance-Voltage (CV):

Cd (square wave deep pulse)
- Cq (square wave quasi static)
- Ch (square wave high frequency)
- Sinusoidal Ch (Agilent 4192A, 4285 A, Keithley 590)

Current Voltage

Current range 10fA to 1mA, Voltage range up to +/-100V
Extended Voltage range +/- 1000V (Keithley 2410, 237)
Constant current
Constant voltage
Multi-terminal IV curves (pseudo MOST technique)

Silicon Oxide And Gate Material, Characterization And Integrity Monitoring:

Cox (Oxide capacitance)
- tox (Oxide thickness)
- K value (dielectric constant)
- K-f (frequency dependent dielectric constant)
- teq (equivalent oxide thickness)
- Vfb (flat band voltage)
- Dit (Interface trap density)
- (Sheet) Resistance and Resistivity measurement of SiO2 and semi-insulating materials
- TDDB (Time dependent dielectric breakdown) tests:
  - tbd (time to breakdown)
  - Qbd (Charge to Breakdown)
  - Vbd (ramp breakdown Voltage)
  - Defect density (Density of defect causing early breakdown, e.g. Pinhole density)
  - Cumulative

Compound Semiconductors

N(W) Carrier density profiling
Resistivity of semi-insulating substrates or layers
Pinch-off Voltage

High Resistivity Materials

I-V (Current vs. Voltage)
(Sheet) Resistance and Resistivity measuremen

Ferroelectric materials

K-E (dielectric vs. electric field)
P-E (polarization vs. electric field)
K-f (dielectric vs. frequency) with Model 192 probe station
K-T (dielectric vs. temperature) with temperature chamber for Tc (Curie temperature)
Hysteresis loop