HG PROBE C- V/I-V C-V MAP SERIES

Four Dimensions' mercury Probe Systems use the liquid metal mercury to form temporary, non-damaging electrical contacts on numerous materials. The instantaneous contact formed on semiconducting materials can be of MOS, MIS, or Schottky barrier type. This permits various electrical characterizations of for example silicon and compound semiconductors without the need of metal deposition processes.

Our unique mercury probe design features outstanding safety and contact area repeatability. It permits us to offer the widest range of contact areas and probe head configurations. mercury refreshing mechanism results in normally No Hg mark left on the test side. The mercury contacts can be a dot (3E-5 cm2 to 0.8 cm2) or a dot and one or more rings, as well as a linear array of four probes. Thus our systems can probe on a variety of substrates including insulators, as well as SOI structures.

Our automated mercury probe systems come with unique capacitance and current meters that can perform C-V, I-V, Q-V, as well as V-t measurements. These measurements allow a wide range of sample characterization:

• Oxide integrity monitoring
• Doping density profiling, low-dose ion implantation monitoring, and USJ doping profiling
• Carrier lifetime extraction
• Resistivity measurements of semi-insulating materials
• Pseudo MOST characterization of SOI structures (B systems)
• Ferroelectric sample investigations
• Poly Silicon characterization

Square waves are used to determine the quasistatic, deep pulse, and high-lets frequency capacitance. Square wave probing is insensitive to series resistance and eliminates the need of phase adjustments required in conventional capacitance measurements using sinusoidal signals. The versatility of the system can be enhanced by accessories for external probing and by attaching external meters such as Agilent 4285A, or Keithley 590 C-V meters, or Keithley 2410 high voltage source.